Method for manufacturing semiconductor light emitting device

ABSTRACT

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of continuation application Ser. No.14/334,164, filed Jul. 17, 2014, which is a continuation of applicationSer. No. 14/081,688, filed Nov. 15, 2013, now U.S. Pat. No. 8,852,976,issued Oct. 7, 2014, which is a continuation of application Ser. No.13/406,840, filed Feb. 28, 2012, now U.S. Pat. No. 8,610,163, issued onDec. 12, 2013, which is a divisional of application Ser. No. 12/797,711filed Jun. 10, 2010 now U.S. Pat. No. 8,148,183 issued on Apr. 3, 2013,which claims the benefit of priority from the prior Japanese PatentApplication No. 2009-180402, filed on Aug. 3, 2009, the entire contentsof each are incorporated herein by reference.

BACKGROUND

Light emitting devices using a blue or near-ultraviolet LED (lightemitting diode) as a light source and emitting white light by means ofphosphors have found wide applications in illumination devices as wellas backlight sources for image display devices, and have beenincreasingly required for higher efficiency. Conventionally, asurface-mounted light emitting device with a light emitting element chipmounted on a lead frame and resin-molded is commercially available.Furthermore, for the purpose of increasing light extraction efficiency,a technique is proposed for removing the support substrate of the lightemitting layer by the laser lift-off process (e.g., U.S. Pat. No.7,241,667).

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 2D are schematic cross-sectional views showing a method formanufacturing a semiconductor light emitting device of this embodiment;

FIGS. 3A to 3C are schematic views showing a separation groove in thesemiconductor light emitting device of this embodiment;

FIG. 4A to FIG. 5C are schematic cross-sectional views showing a methodfor manufacturing a semiconductor light emitting device of anotherembodiment; and

FIGS. 6A and 6B are schematic cross-sectional views of the semiconductorlight emitting device of the another embodiment.

DETAILED DESCRIPTION

According to one embodiment, a method for manufacturing a semiconductorlight emitting device includes forming a separation groove on a majorsurface of a substrate. A semiconductor layer including a light emittinglayer is formed on the substrate. The separation groove separates thesemiconductor layer into a plurality of elements. The method includesforming an insulating film on the major surface of the substrate. Theinsulating film covers the semiconductor layer and a bottom surface ofthe separation groove provided on the substrate. The method includesseparating the substrate from the semiconductor layer by irradiating thesemiconductor layer with laser light from an surface of the substrateopposite to the major surface. An edge portion of irradiation area ofthe laser light is positioned near an edge portion of the semiconductorlayer neighboring the separation groove.

Embodiments will now be described with reference to the drawings.

FIG. 2D is a schematic cross-sectional view of a semiconductor lightemitting device of an embodiment. Two instances, for example, of thesemiconductor light emitting device separated from the wafer state areshown in FIG. 2D.

The semiconductor light emitting device of this embodiment includes alight emitting element 12 and a interconnection section. The lightemitting element 12 includes a semiconductor layer 12 a and asemiconductor layer 12 b. The semiconductor layer 12 b has a structurein which a light emitting layer is sandwiched between a p-type claddinglayer and an n-type cladding layer. The semiconductor layer 12 a isillustratively of n-type and functions as a lateral current path.However, the conductivity type of the semiconductor layer 12 a is notlimited to n-type, but may be p-type.

The semiconductor layer 12 b is not provided on a portion of theopposite surface of the semiconductor layer 12 a from the top surface60. An n-side electrode 13 is formed on that portion. A p-side electrode14 is formed on the opposite surface of the semiconductor layer 12 bfrom the surface provided with the semiconductor layer 12 a.

The opposite side of the semiconductor layer 12 a and the semiconductorlayer 12 b from the top surface 60 is covered with an insulating film15. The top surface 60 is exposed from the insulating film 15. An n-sideinterconnection layer 18 and a p-side interconnection layer 19 areformed on the opposite surface of the insulating film 15 from the topsurface 60 and separated from each other.

The n-side electrode 13 is electrically connected to the n-sideinterconnection layer 18 through an n-side contact portion 16. Thep-side electrode 14 is electrically connected to the p-sideinterconnection layer 19 through a p-side contact portion 17.

An n-side metal pillar 21 is provided below the n-side interconnectionlayer 18. A p-side metal pillar 22 is provided below the p-sideinterconnection layer 19. The periphery of the n-side metal pillar 21,the periphery of the p-side metal pillar 22, the n-side interconnectionlayer 18, and the p-side interconnection layer 19 are covered with aresin 20.

An external terminal 23 illustratively made of a solder ball or metalbump and to be connected to an external circuit is provided on the lowerend surface of the n-side metal pillar 21 and the p-side metal pillar 22exposed from the resin 20.

The semiconductor layer 12 a is electrically connected to the externalterminal 23 through the n-side electrode 13, the n-side contact portion16, the n-side interconnection layer 18, and the n-side metal pillar 21.The semiconductor layer 12 b is electrically connected to the externalterminal 23 through the p-side electrode 14, the p-side contact portion17, the p-side interconnection layer 19, and the p-side metal pillar 22.

Even if the semiconductor layers 12 a, 12 b are thin, mechanicalstrength can be maintained by thickening the n-side metal pillar 21, thep-side metal pillar 22, and the resin 20. Furthermore, in the case wherethe individual semiconductor light emitting device is mounted on acircuit board or the like via the external terminals 23, the stressapplied to the light emitting element 12 through the external terminals23 can be absorbed and relaxed by the n-side metal pillar 21 and thep-side metal pillar 22.

Next, a method for manufacturing a semiconductor light emitting deviceof this embodiment is described with reference to FIGS. 1A to 3C.

First, as shown in FIG. 1A, a stacked body of a semiconductor layer 12 aand a semiconductor layer 12 b is formed on the major surface of asubstrate 1. The semiconductor layer 12 b, after being formed entirelyon the semiconductor layer 12 a, is patterned using a resist mask, notshown, and separated into a plurality. For instance, in the case wherethe light emitting layer is made of a nitride semiconductor, thesemiconductor layers 12 a, 12 b can be crystallized on the substrate 1illustratively made of sapphire.

Next, part of the semiconductor layer 12 a is removed illustratively byRIE (reactive ion etching) or laser ablation to form a separation groove31 as shown in FIG. 1B. This separation groove 31 separates thesemiconductor layer 12 a and the semiconductor layer 12 b into aplurality of light emitting elements 12 on the major surface of thesubstrate 1. The separation groove 31 is illustratively formed like alattice as shown in FIG. 3A. The planar shape of each light emittingelement 12 is formed generally like a quadrangle whose periphery issurrounded like a frame by the separation groove 31.

A p-side electrode 14 is formed on the surface of the semiconductorlayer 12 b. An n-side electrode 13 is formed on a portion of the surfaceof the semiconductor layer 12 a not covered with the semiconductor layer12 b.

Next, as shown in FIG. 1C, an insulating film 15 covering thesemiconductor layer 12 a and the semiconductor layer 12 b is formed onthe substrate 1. The insulating film 15 is illustratively made of anorganic material such as photosensitive polyimide. Thus, the separationgroove 31 is filled with the insulating film 15.

Next, an opening reaching the n-side electrode 13 and an openingreaching the p-side electrode 14 are formed in the insulating film 15.Then, an n-side contact portion 16 is provided in the opening reachingthe n-side electrode 13, and a p-side contact portion 17 is provided inthe opening reaching the p-side electrode 14. Furthermore, on theinsulating film 15, an n-side interconnection layer 18 connected to then-side contact portion 16 and a p-side interconnection layer 19connected to the p-side contact portion 17 are formed.

The n-side contact portion 16, the p-side contact portion 17, the n-sideinterconnection layer 18, and the p-side interconnection layer 19 areillustratively formed by the plating process. That is, a seed metal, notshown, is formed on the inner wall of the opening formed in theinsulating film 15 and on the surface of the insulating film 15, andthen metal deposition is performed.

Next, as shown in FIG. 1D, an n-side metal pillar 21 is provided on then-side interconnection layer 18, and a p-side metal pillar 22 isprovided on the p-side interconnection layer 19. The periphery of thesen-side metal pillar 21 and p-side metal pillar 22 is filled with a resin20. The resin 20 covers the n-side interconnection layer 18, the p-sideinterconnection layer 19, the periphery of the n-side metal pillar 21,and the periphery of the p-side metal pillar 22. The upper surface ofthe n-side metal pillar 21 and the p-side metal pillar 22 is exposedfrom the resin 20. The resin 20 is illustratively composed of epoxyresin, silicone resin, or fluororesin mixed with a filler. The resin 20is provided also on the insulating film 15 on the separation groove 31.

The n-side contact portion 16, the p-side contact portion 17, the n-sideinterconnection layer 18, the p-side interconnection layer 19, then-side metal pillar 21, and the p-side metal pillar 22 can be made ofsuch a material as copper, gold, nickel, and silver. Among them, it ismore preferable to use copper, which has good thermal conductivity, highmigration resistance, and superior contact with the insulating film 15.

After the structure of FIG. 1D is obtained, the processes of FIGS. 2A to2D follow. It is noted that FIGS. 2A to 2D are depicted with thevertical positional relationship of the substrate 1 and the lightemitting element 12 turned upside down with respect to FIGS. 1A to 1D.

FIG. 2A shows the process for removing the substrate 1 by the laserlift-off process. The semiconductor layer 12 a is irradiated with thelaser light L. The laser light L is applied to the semiconductor layer12 a from the opposite surface (rear surface) side of the substrate 1,opposite to the major surface on which the light emitting element 12 isformed. The wavelength of the laser light L is such that the substrate 1is transparent (transmissive) to the laser light L and that thewavelength falls in the absorption region of the semiconductor layer 12a.

When the laser light L reaches the interface between the substrate 1 andthe semiconductor layer 12 a, the semiconductor layer 12 a near theinterface is thermally decomposed by absorbing the energy of the laserlight L. For instance, in the case where the semiconductor layer 12 a ismade of GaN, it is decomposed into Ga and nitrogen gas. Ga is left onthe semiconductor layer 12 a side. This thermal decomposition forms asmall gap between the substrate 1 and the semiconductor layer 12 a,thereby separating the substrate 1 from the semiconductor layer 12 a.

The laser light L is applied to the light emitting element 12illustratively one by one. Here, the edge portion of the irradiationarea of laser light L is positioned in the separation groove 31. Theedge portion 50 of the irradiation area of laser light L is indicated bydashed lines in FIGS. 2A and 3B. The generally quadrangular regioninside the edge portion 50 is the irradiation area for one shot of laserlight.

Upon irradiation with the laser light L, a gas is generated byvaporization due to abrupt thermal decomposition of the semiconductorlayer 12 a. At this time, impact of the high-pressure gas on thesemiconductor layers 12 a, 12 b may cause cracking, crystal dislocation,fracture and the like in the semiconductor layers 12 a, 12 b. The gasgenerated by thermal decomposition of the semiconductor layer 12 a candiffuse in the plane direction through a gap produced between thesubstrate 1 and the semiconductor layer 12 a. However, the outside ofthe irradiation area of laser light L remains in the solid phase withoutbeing laser heated. Hence, the solid-phase portion restricts thediffusion of the gas, and the gas pressure is likely to increase at itsedge portion 50. Furthermore, a large stress is likely to act on theedge portion 50 of the irradiation area of laser light L because of theenergy difference, temperature difference, phase difference and the likebetween the applied portion and the unapplied portion of laser light L.Hence, the semiconductor layers 12 a, 12 b tend to be damagedparticularly at the edge portion 50 of the irradiation area of laserlight L.

Thus, in this embodiment, the edge portion 50 of the irradiation area oflaser light L is positioned in the separation groove 31. Thesemiconductor layers 12 a, 12 b do not exist in the separation groove31, and hence the edge portion 50 of the irradiation area of laser lightL is not positioned in the semiconductor layers 12 a, 12 b. Thus, damageto the semiconductor layers 12 a, 12 b can be prevented.

Furthermore, the insulating film 15 illustratively made of polyimide,which is more flexible than the semiconductor layers 12 a, 12 b, isprovided in the separation groove 31. Deformation of this insulatingfilm 15 relaxes stress and can prevent a large stress from acting on thesemiconductor layers 12 a, 12 b. Furthermore, the gas can also bereleased through the gap between the substrate 1 and the insulating film15 in the separation groove 31, produced by the deformation of theinsulating film 15.

Furthermore, if the separation groove 31 is empty, then because of alarge refractive index difference from that of the semiconductor layer12 a, the wave front of laser light L near the separation groove 31 isgreatly refracted toward the semiconductor layer 12 a, and the electricfield intensity is greatly disturbed. This causes disturbances in theintensity of the laser light L near the end portion of the semiconductorlayer 12 a, and unfortunately, the removing condition of the substrate 1by the laser lift-off process is likely to be unstable.

In contrast, in this embodiment, the separation groove 31 is filled withthe insulating film 15. This decreases the refractive index differenceand reduces the bending of the wave front of laser light L. Thus, theintensity distribution of laser light L can be made more stable, and theinstability of the removing condition can be prevented.

It is preferable that the separation groove 31 be filled with theinsulating film 15. However, even if it is not filled, if the insulatingfilm 15 is provided near the periphery of the semiconductor layer 12 aon the major surface of the substrate 1, the aforementioned wave frontbending of laser light L due to refractive index difference issuppressed. This can achieve the effect of stabilizing the intensitydistribution and facilitating stabilization of the removing condition.

As described above, this embodiment can prevent damage to thesemiconductor layers 12 a, 12 b when the laser light L is appliedthereto. This makes it possible to prevent the decrease of lightemission efficiency and light extraction efficiency, and current leak.

Also for another light emitting element 12, as shown in FIG. 2B, thelaser light L is applied so that the edge portion 50 of the irradiationarea of laser light L is positioned in the separation groove 31. Thus,also in that light emitting element 12, the substrate 1 can be separatedfrom the semiconductor layer 12 a without damage to the semiconductorlayers 12 a, 12 b.

Application of the laser light L as described above is performed for allthe light emitting elements 12 to separate the substrate 1 from thesemiconductor layers 12 a, 12 b throughout the wafer. Furthermore, theapplication of laser light L also to the separation groove 31 reducesthe adhesive strength between the insulating film 15 provided in thatseparation groove 31 and the substrate 1. This allows the substrate 1 tobe removed from above the light emitting element 12. The area where theinsulating film 15 is in contact with the substrate 1 in the separationgroove 31 is much smaller than the overall area of the wafer. Hence,even if the insulating film 15 in the separation groove 31 is notcompletely separated from the substrate 1, the substrate 1 can beremoved by simply reducing the adhesive strength.

Furthermore, the irradiation area of laser light L shown in FIG. 2A inwhich the application of laser light L is performed earlier is slightlyoverlapped in the separation groove 31 with the irradiation area oflaser light L shown in FIG. 2B in which the irradiation with laser lightL is performed later. This avoids occurrence of an unirradiated portionwith the laser light L in the insulating film 15 provided in theseparation groove 31, reliably reduces the adhesive strength betweenthat insulating film 15 and the substrate 1, and facilitates strippingthe substrate 1.

Here, the overlapping portion of laser light L is located on theinsulating film 15. Hence, as compared with the case where theseparation groove 31 is empty, the wave front bending of laser light Ldue to refractive index difference is suppressed. This can achieve theeffect of stabilizing the intensity distribution and facilitatingstabilization of the removing condition.

Alternatively, the adjacent irradiation areas may not overlap in theseparation groove 31. In this case, an unirradiated portion with thelaser light L occurs in the insulating film 15 provided in theseparation groove 31. Some unirradiated portion is allowed to occur inthe insulating film 15 to the extent that removing of the substrate 1 isnot affected.

By first applying laser light to the light emitting elements 12 on theouter side of the wafer, the gas generated by applying laser light tothe light emitting elements 12 on the inner side of the wafer can bereleased to the space outside the wafer through the gap between thesemiconductor layer 12 a on the outer side and the substrate 1 andthrough the gap between the insulating film 15 in the separation groove31 around that semiconductor layer 12 a and the substrate 1. That is,laser light is first applied to the outer side of the wafer so that therelease route of the gas to the outside of the wafer is successivelyconnected to the inner side. This can prevent damage to each lightemitting element 12 throughout the wafer.

Even if the separation groove 31 is filled with the insulating film 15,the gas pressure can be relaxed through the gap which is produced bydeformation of the resin or by fine removing of the resin from thesubstrate 1 when the gas pressure increases. Thus, the effect of beingable to reduce damage to the semiconductor layers 12 a, 12 b isachieved.

The application of laser light L is not limited to one-by-oneapplication to the light emitting element 12 separated by the separationgroove 31, but may be performed in blocks of a plurality of lightemitting elements 12. FIG. 3C shows an example in which laser lightapplication for one shot is illustratively performed on four lightemitting elements 12. Also in the case of application in blocks of aplurality of light emitting elements 12, the edge portion 50 of theirradiation area of laser light L is positioned in the separation groove31.

After the substrate 1 is removed, as shown in FIG. 2C, a solder ball,metal bump or the like functioning as an external terminal 23 is formedon the lower end portion of the n-side metal pillar 21 and the p-sidemetal pillar 22. Subsequently, dicing is performed along the separationgroove 31 for singulation as shown in FIG. 2D. The singulation may beperformed for each single light emitting element 12, or in blocks of aplurality of light emitting elements 12.

The aforementioned processes up to dicing are each performedcollectively in the wafer state, hence enabling production at low cost.Furthermore, the package structure including the protective resin,interconnections, and electrodes is formed at the wafer level. Thisfacilitates downsizing in which the planar size of the semiconductorlight emitting device is close to the planar size of the bare chip(light emitting element 12).

Next, FIG. 4A shows an embodiment in which the edge portion 50 of theirradiation area of laser light L is positioned at the edge portion 12 eof the semiconductor layer 12 a neighboring the separation groove 31 orslightly inside that edge portion 12 e on the semiconductor layer 12 aside.

When the laser light L is applied, damage to the semiconductor layers 12a, 12 b is likely to occur at the boundary where the energy,temperature, phase and the like greatly vary. Depending on the laserirradiation condition and the irradiated object, the boundary where theenergy, temperature, phase and the like greatly vary does notnecessarily coincide with the edge portion 50 of the irradiation area.Some energy and heat of the laser light L may reach the portion outsidethat edge portion 50. In that case, the boundary where the energy,temperature, phase and the like greatly vary lies outside the edgeportion 50 of the application area.

Thus, in the embodiment shown in FIG. 4A, the edge portion 50 of theirradiation area of laser light L is positioned at the edge portion 12 eof the semiconductor layer 12 a or slightly inside that edge portion 12e on the semiconductor layer 12 a side so that the boundary where theenergy, temperature, phase and the like greatly vary lies in theseparation groove 31. This can prevent damage to the semiconductorlayers 12 a, 12 b because the semiconductor layers 12 a, 12 b do notexist in the separation groove 31 including the boundary where theenergy, temperature, phase and the like greatly vary.

Furthermore, because the insulating film 15 in the separation groove 31is not covered with the application area of laser light L, action ofexcessive energy and heat on the insulating film 15 in the separationgroove 31 can be suppressed. This can prevent degradation of reliabilitydue to cracks in the insulating film 15 and the stress to thesemiconductor layers 12 a, 12 b due to large deformation of theinsulating film 15.

Next, FIG. 4B shows an embodiment in which a groove 32 is formed in thesubstrate 1. The groove 32 is formed in a portion of the substrate 1opposed to the separation groove 31. The groove 32 is illustrativelyformed like a lattice throughout the wafer, like the separation groove31 shown in FIG. 3A. The width of the groove 32 is smaller than thewidth of the separation groove 31, and the edge portion of thesemiconductor layer 12 a does not overlap the groove 32.

When the laser light L is applied, the gas generated at the interfacebetween the substrate 1 and the semiconductor layer 12 a can be releasedto the outside of the wafer through the groove 32. The application oflaser light L results in decreasing the adhesive strength between theinsulating film 15 in the separation groove 31 and the substrate 1, ordeforming the insulating film 15. This allows the gas generated at theinterface between the substrate 1 and the semiconductor layer 12 a toeasily pass between the insulating film 15 and the substrate 1 and reachthe groove 32.

By forming the groove 32, the gas generated upon the application oflaser light L can be effectively released, and the increase of gaspressure near the light emitting element 12 can be prevented. In thiscase, application of laser light may be performed not from the outerside of the wafer. Because the groove 32 for gas release is alreadyformed throughout the wafer, the gas generated can be released to theoutside of the wafer through the groove 32 even if application of laserlight is first performed on the inner side of the wafer.

After the separation groove 31 is formed in the process shown in FIG. 1Bdescribed above, the groove 32 is formed in a portion opposed to theseparation groove 31. Subsequently, the insulating film 15 is formed onthe major surface of the substrate 1. The insulating film 15 is suppliedin a liquid or viscous state onto the major surface of the substrate 1,and then cured. Thus, if the width of the groove 32 is as small as e.g.1 μm or less and the insulating film 15 is illustratively made ofpolyimide with relatively high viscosity, then the groove 32 can be leftunfilled with the insulating film 15.

Alternatively, as shown in FIG. 4C, a groove 33 may be formed on theinsulating film 15 side. The groove 33 is formed as a void in theinsulating film 15 provided in the separation groove 31. The groove 33is also illustratively formed like a lattice throughout the wafer, likethe separation groove 31 shown in FIG. 3A. The width of the groove 33 issmaller than the width of the separation groove 31, and the edge portionof the semiconductor layer 12 a does not overlap the groove 33.

Also in this case, when the laser light L is applied, the gas generatedat the interface between the substrate 1 and the semiconductor layer 12a can be released to the outside of the wafer through the groove 33.Furthermore, application of laser light may be performed not from theouter side of the wafer. Because the groove 33 for gas release isalready formed throughout the wafer, the gas generated can be releasedto the outside of the wafer through the groove 33 even if application oflaser light is first performed on the inner side of the wafer.

After the process of FIG. 1D, a void can be formed in the insulatingfilm 15 by laser ablation in which laser light is locally applied fromthe rear side of the substrate 1 to the insulating film 15 provided inthe separation groove 31. This laser light has a narrower irradiationarea than the laser light L for removing the substrate 1, and isnarrowed like a spot. By this laser ablation, part of the insulatingfilm 15 provided in the separation groove 31 can be vaporized to form agroove 33. Thus, at least the portion where the groove 33 is to beformed is preferably made of a resin vaporizable by laser ablation, suchas polyester, polycarbonate, and polyurethane. Because the groove 33 isformed throughout the wafer, the vaporized resin is released to theoutside of the wafer through the groove 33.

FIGS. 5A to 5C show another method for forming a separation grooveseparating the semiconductor layer 12 a.

This method follows the process up to FIG. 1D without performing theprocess of forming the separation groove 31 at the stage shown in FIG.1B described above. Hence, as shown in FIG. 5A, the semiconductor layer12 a is not separated but remains connected.

Then, as shown in FIG. 5B, laser ablation is performed in which laserlight L′ is locally applied from the rear side of the substrate 1 onlyto a portion where a separation groove is to be formed. This laser lightL′ has a narrower irradiation area than the laser light L for removingthe substrate, and is narrowed like a spot. By this laser ablation, partof the semiconductor layer 12 a is vaporized and removed. Thus, aseparation groove 34 separating the semiconductor layer 12 a is formed.Because the insulating film 15 is not provided in this separation groove34, the separation groove 34 also functions as an release route for gasgenerated by the application of laser light L for stripping thesubstrate. The separation groove 34 is also illustratively formed like alattice throughout the wafer.

To ensure complete separation of the semiconductor layer 12 a, it ispreferable to also remove, by laser ablation, a portion of theinsulating film 15 in contact with the portion of the semiconductorlayer 12 a where the separation groove 34 is formed. Thus, that portionis preferably made of a material vaporizable by laser ablation, such aspolyester, polycarbonate, and polyurethane described above. By removingpart of the insulating film 15, the cross-sectional area of the routefor gas release can also be increased to effectively release the gas.

To remove the substrate, as shown in FIG. 5C, the laser light L isapplied so that the edge portion 50 of the irradiation area of laserlight L is positioned in the separation groove 34 where the lightemitting element 12 does not exist. This can prevent damage to the lightemitting element 12. Furthermore, because the gas can be releasedthrough the separation groove 34, which is a void, the increase of gaspressure near the light emitting element 12 can be avoided moreeffectively.

FIG. 6A shows a structure in which the side surface of the semiconductorlayers 12 a, 12 b is covered with a passivation film 70 illustrativelymade of a dielectric such as silicon oxide and silicon nitride. This cansuppress leak current and prevent degradation of reliability due tooxidation of the side surface of the semiconductor layers 12 a, 12 b. Byseparating the passivation film 70 in the separation groove 31, impactat the time of removing the substrate 1 by the laser lift-off processcan be inhibited from propagating to the adjacent elements through thepassivation film 70.

Furthermore, as shown in FIG. 6B, a void 71 can be formed below thepassivation film 70 at the position of the separation groove 31. Thus,the release route for gas generated at the time of laser lift-off can beactively secured, and damage to the semiconductor layers 12 a, 12 b dueto impact can be suppressed. The void 71 can be formed by forming asacrificial layer in the separation groove 31 on the substrate 1 andremoving the sacrificial layer by etching and the like.

The material, size, shape, layout and the like of the substrate, lightemitting element, electrode, interconnection layer, metal pillar,insulating film, and resin can be variously modified by those skilled inthe art, and such modifications are also encompassed within the scope ofthe invention as long as they do not depart from the spirit of theinvention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel devices and methods describedherein may be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the devices andmethods described herein may be made without departing from the spiritof the inventions. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the invention.

What is claimed is:
 1. A semiconductor light emitting device comprising:a semiconductor layer including a first surface, a second surfaceopposite to the first surface, and a light emitting layer; a p-sideelectrode and an n-side electrode provided on the semiconductor layer;an insulating film provided on the second surface and an outside of aside surface continued from the first surface of the semiconductorlayer, the insulating film having a first opening and a second opening,the first opening reaching the n-side electrode, the second openingreaching the p-side electrode; a p-side interconnection layer providedon the second surface side and connected to the p-side electrode; ann-side interconnection layer provided on the second surface side andconnected to the n-side electrode; a p-side pillar connected to thep-side interconnection layer and having a first external end portion; ann-side pillar connected to the n-side interconnection layer and having asecond external end portion; and a resin provided between the p-sidepillar and the n-side pillar, a thickness of the resin being thickerthan a thickness of the insulating film, a part of any one of the p-sideinterconnection layer and the n-side interconnection layer beingconnected to a region not including the light emitting layer of thesemiconductor layer, and another part of the one of the p-sideinterconnection layer and the n-side interconnection layer extending tothe light emitting layer side.
 2. The device according to claim 1,wherein the semiconductor layer had been formed on a substrate.
 3. Thedevice according to claim 1, further comprising: a p-side contactportion provided in the first opening and connected to the p-sideelectrode; and an n-side contact portion provided in the second openingand connected to the n-side electrode, the p-side interconnection layerconnected to the p-side electrode through the p-side contact portion,and the n-side interconnection layer connected to the n-side electrodethrough the n-side contact portion.
 4. The device according to claim 1,wherein the insulating film includes a resin.
 5. The device according toclaim 4, wherein the resin of the insulating film is any of an epoxyresin, a silicone resin and a fluororesin.
 6. The device according toclaim 1, wherein the insulating film includes silicon oxide or siliconnitride.
 7. The device according to claim 1, wherein the p-sideinterconnection layer and the n-side interconnection layer includecopper.
 8. The device according to claim 1, wherein the semiconductorlayer is a nitride semiconductor.
 9. The device according to claim 1,wherein an upper face of the insulating film provided on the sidesurface of the semiconductor layer, is provided in the same plane as thefirst surface of the semiconductor layer.
 10. The device according toclaim 1, wherein a planar shape of the semiconductor layer is formed aquadrangle, and the insulating film provided on the side surface of thesemiconductor layer surrounds the semiconductor layer like a frame. 11.A method for manufacturing a semiconductor light emitting device,comprising: forming a semiconductor layer including a light emittinglayer on a substrate, the semiconductor layer having a first surface onthe substrate side and a second surface opposite to the first surface;forming a separation groove in the semiconductor layer, the separationgroove separating the semiconductor layer; forming a p-side electrode onthe semiconductor layer; forming a n-side electrode on the semiconductorlayer; forming an insulating film so as to form on the semiconductorlayer and a bottom surface of the separation groove; forming a contactportion and an interconnection layer on the second surface side; forminga pillar on the interconnection layer; forming a resin on the insulatingfilm on the separation groove, a thickness of the resin being thickerthan a thickness of the insulating film; removing the substrate from thesemiconductor layer after forming the pillar; and singulating thesemiconductor light emitting device by cutting the resin at theseparation groove after removing the substrate from the semiconductorlayer, the insulating film provided around the contact portion and theinterconnection layer.
 12. The method according to claim 11, wherein thecontact portion penetrates the insulating film and reaches the p-sideelectrode and the n-side electrode, and the interconnection layer isformed on the insulating film and is electrically connected to thep-side electrode and the n-side electrode through the contact portion.13. The method according to claim 11, wherein the insulating filmincludes a resin.
 14. The method according to claim 11, wherein theresin is any of an epoxy resin, a silicone resin and a fluororesin. 15.The method according to claim 11, wherein the insulating film includessilicon oxide or silicon nitride.
 16. The method according to claim 11,wherein the semiconductor layer is a nitride semiconductor.
 17. Themethod according to claim 11, wherein the semiconductor layer includes aside surface continued from the first surface, the insulating film formson the second surface and the side surface of the semiconductor layer.18. The method according to claim 17, wherein a planar shape of thesemiconductor layer is formed a quadrangle, and the insulating filmformed on the side surface of the semiconductor layer surrounds thesemiconductor layer like a frame.